ESD protection circuit sustaining high ESD stress

ABSTRACT

A substrate-triggered ESD protection component having dummy gate structures. The ESD protection component includes a bipolar junction transistor (BJT), a substrate-triggering region to provide triggering current and a dummy gate structure. The BJT comprises a collector. The dummy gate structure has a poly-silicon gate adjacent to the collector and the substrate-triggering region. The emitter of the BJT is coupled to a power line, the collector is coupled to a pad, and the substrate-triggering region is coupled to an ESD detection circuit. During normal circuit operations, a base of the BJT is coupled with the power line through the ESD detection circuit to keep the BJT off. When an ESD event occurs between the pad and the power line, a triggering current is provided to the substrate-triggering region by the ESD detection circuit to trigger on the BJT and release ESD current.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates in general to an electrostaticdischarge (ESD) protection component, and more particularly to an ESDprotection component using dummy gate structures to isolatesubstrate-triggering regions.

[0003] 2. Description of the Related Art

[0004] As manufacturing processes progress, highly integrated designssuch as miniaturized components, shallower junction depths, thinner gateoxide layers, lightly-doped drain (LDD) structures and salicide processhave made integrated circuits (ICs) more vulnerable to ESD damage. ESDprotection circuits or ESD protection components are frequently builtinto chips to prevent such damage.

[0005] N-type metal-oxide-semiconductors (NMOSs) with finger-typestructure are usually used as ESD protection components to releasetransient current during an ESD event. However, ESD robustness may notbe improved as the size of the NMOSs become larger, due to lack ofturn-on uniformity.

[0006] The turn-on uniformity of the finger-type NMOSs can be enhancedwith gate-driven or substrate-triggered techniques as shown in FIGS. 1aand 1 b. With a gate-driven technique, gate-oxide layers at gates ofMOSs are easily damaged when the gates are overstressed and large ESDcurrent flows through the surface channel under the gates. ESDrobustness of the gate-driven MOSs is decreased when the gate voltage issomewhat increased. With a substrate-triggered technique, on the otherhand, ESD robustness increases with growing bias current at a substrate.Substrate-triggered techniques are thus more suitable for solving ESDproblems in ICs.

[0007] Substrate-triggered techniques have been disclosed in U.S. Pat.Nos. 5,744,842 and 6,072,219 in FIGS. 2, 3a and 3 b. In both cases,field oxide layers are used to isolate substrate triggering dopedregions and doped regions used as drains/sources of ametal-oxide-semiconductor field-effect-transistor (MOSFET). Field oxidelayers can be formed by local oxidation (LOCOS) or shallow trenchisolation (STI).

SUMMARY OF THE INVENTION

[0008] The present invention is directed to a substrate-triggered ESDprotection component having high triggering speed, and its applicationin a circuit.

[0009] The present is further directed to a substrate-triggered ESDprotection component having smaller size, and its application in acircuit.

[0010] Accordingly, the present invention provides a substrate-triggeredESD protection component having dummy gate structures. The ESDprotection component comprises a bipolar junction transistor (BJT), asubstrate-triggering region to provide triggering current and a dummygate structure. The BJT comprises a collector. The dummy gate structurehas a poly-silicon gate adjacent to the collector and thesubstrate-triggering region. An emitter of the BJT is coupled to a powerline, the collector is coupled to a pad, and the substrate-triggeringregion is coupled to an ESD detection circuit. During normal circuitoperations, a base of the BJT is coupled with the power line through theESD detection circuit. When an ESD event occurs between the pad and thepower line, a triggering current is provided to the substrate-triggeringregion by the ESD detection circuit to trigger the BJT and release ESDcurrent.

[0011] The BJT can be a lateral BJT parasitic under a gate structure ofa MOSFET. The MOSFET can be a single MOSFET or a stacked MOSFET.

[0012] The present invention further provides an ESD protection circuit,comprising an ESD detection circuit, and the substrate-triggered ESDprotection component having the dummy gate structures described. Duringnormal circuit operations, the base is coupled to the power line. Whenan ESD event occurs between the pad and power line, thesubstrate-triggering current is provided by the ESD detection circuit totrigger the BJT and release ESD current.

[0013] The present invention further provides more structuresimplementing the substrate-triggering ESD protection component of thepresent invention, including finger-type MOSFET and polygon MOSFETstructures.

[0014] According to an ESD protection component of the presentinvention, a substrate-triggering region is closer to a base of aparasitic BJT in an ESD protection component. The ESD protectioncomponent is triggered much faster during an ESD event, resulting inbetter ESD robustness.

BRIEF DESCRIPTION OF THE DRAWINGS

[0015] For a better understanding of the present invention, reference ismade to a detailed description to be read in conjunction with theaccompanying drawings, in which:

[0016]FIGS. 1a and 1 b are schematic diagrams respectively showing anESD gate-driven technique and a substrate-triggered technique;

[0017]FIGS. 2, 3a and 3 b show embodiments of substrate-triggeredtechniques;

[0018]FIG. 4a shows a cross section and the corresponding symbol of anNMOS fabricated in accordance with the present invention as an ESDprotection component;

[0019]FIG. 4b is a circuit implemented by the NMOS in FIG. 4a.

[0020]FIG. 5 is a cross section of a PMOS fabricated in accordance withthe present invention as an ESD protection component;

[0021]FIG. 6 is the top view of a layout of an NMOS structure of thepresent invention;

[0022]FIGS. 7 and 12 show two tetragon NMOS cells fabricated inaccordance with the present invention as ESD protection components;

[0023]FIGS. 8 and 13 show embodiments of the tetragon NMOS or PMOS cellsof the present invention used at an I/O pad of ESD protection circuits;

[0024]FIGS. 9 and 14 show embodiments of the tetragon NMOS or PMOS cellsof the present invention used in ESD clamping circuits;

[0025]FIG. 10a is a cross section and a corresponding symbol of stackedNMOSs of the present invention;

[0026]FIG. 10b shows a circuit implemented by the stacked NMOSs of thepresent invention; and

[0027]FIG. 11 is the top view of a layout of the stacked NMOSs of thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

[0028] The present invention utilizes a dummy gate to isolate asubstrate-triggering region from drain/source regions of a MOSFET andhence optimize ESD robustness.

[0029] A cross section of an NMOS fabricated in accordance with thepresent invention as an ESD protection component is shown in FIG. 4a. Acircuit implemented by the NMOS in FIG. 4a is shown in FIG. 4b. In FIG.4a, a P+ doped region 10 used as a substrate-triggering region toprovide triggering current is encased in a drain region 12 of the NMOS.The P+ doped region 10 is isolated from the drain region 12 by a dummygate structure 16. During a P+ ion implantation, the P+ doped region 10and a region 16 a of the dummy gate structure 16 adjacent to the P+doped region 10 are simultaneously doped with positive-type ions. Duringan N+ ion implantation, the drain region 12 and a region 16 b of thedummy gate structure 16 adjacent to the drain region 12 aresimultaneously doped with negative-type ions.

[0030] As shown in FIG. 4b, the substrate-triggering region 10 iscoupled to an ESD detection circuit 50. Embodiments of the ESD detectioncircuit 50 are disclosed in prior art such as U.S. Pat. Nos. 5,744,842and 6,072,219. The drain region 12 of the NMOS is coupled to a pad 52 ora high power line VDD. A source region 20 of the NMOS is coupled to alow power line VSS. A P+ doped region 18 grounds a P-substrate 14 and isused as a guard ring of the NMOS for preventing latch-up. TheP-substrate 14 can be a P-well formed on a P-substrate. A lateral NPNbipolar junction transistor (BJT) formed by the drain region 12, theP-substrate 14 and the source region 20 is parasitic under apoly-silicon gate 24, as shown in FIG. 4a.

[0031] During normal circuit operations, a base of the NPN BJT iscoupled to the low power line VSS via a spread resistance R_(sub) in theP-substrate 14 and the P+ doped region 18. The NPN BJT is closed,leaving the NMOS to be controlled by a gate voltage. When positivepulses of an ESD occurs at the drain region 12 of the NMOS, triggeringcurrent I_(trig) is provided by the ESD detection circuit 50 to the P+doped region 10. As the triggering current I_(trig) flows toward the lowpower line VSS, the voltage at the base of the NPN BJT increases. Theparasitic NPN BJT is then triggered, releasing large ESD current.

[0032] In FIG. 4a, an N-well 19 formed under the source region 20 is anoption to increase the spread resistance R_(sub) between the base of theBJT and the P+ doped region 18, and to enhance the triggering speed ofthe ESD protection component.

[0033] In addition to a NMOS, the concept of the present invention canalso be applied to a PMOS used as an ESD protection component, as shownin FIG. 5. An N-well 19 is formed on a P-substrate 14 to become a bulkof the PMOS. The transition of the ESD protection component from theNMOS in FIG. 4 to the PMOS in FIG. 5 can be easily comprehended by thoseskilled in the art and is not described herein.

[0034] The width of a poly-silicon gate can be narrower than that of afield oxide layer. Using the dummy gate structure 16 to isolate thesubstrate-triggering region from the source/drain region of the MOSFET,the distance between the substrate-triggering region and the base of theparasitic BJT is shortened. In short, when a dummy gate structure isused, the triggering current I_(trig) reaches the base of the BJT morequickly in an ESD event such that the triggering speed and ESDrobustness of the ESD protection component are improved.

[0035]FIG. 6 is the top view of a NMOS structure fabricated inaccordance with the present invention. The NMOS structure is surroundedby a guard ring 18 that is isolated from an active area 34 by a fieldoxide layer 32. The NMOS structure in FIG. 6 is a finger-type NMOSstructure having a plurality of gate structures 24 formed approximatelyin parallel. N+ drain regions 12 and N+ source regions 20 arealternately formed between the gate structures 24. Dummy gate structures16 are formed in the drain regions 12. P+ doped regions 10 surrounded bythe dummy gate structures 16 are used as substrate-triggering regionsproviding triggering current. Regions 16 b of the dummy gate structures16 are doped with negative-type ions and regions 16 a of the dummy gatestructures 16 are doped with positive-type ions. The dummy gatestructures 16 are formed in accordance with a minimum rule to shortenthe distance between the doped regions 10 and bases of the parasitic NPNBJTs. The formation of a PMOS structure using dummy gate structures issimilar to that of the NMOS structure in FIG. 6. Therefore, relevantdescriptions are omitted herein.

[0036] An ESD protection component of the present invention can befabricated into an n-sided polygon for having a minimum layout area andgood turn-on uniformity. A tetragon (n=4) ESD protection component isused as an example as follows. A tetragon NMOS cell used as an ESDprotection component in accordance with the present invention is shownin FIG. 7. A P+ doped region 10 used as a substrate-triggering region toprovide triggering current is surrounded by a dummy gate structure 16isolating the P+ doped region 10 from a drain region 12 of the NMOScell. A region 16 b of the dummy gate structure 16 is doped withnegative-type ions. A region 16 a of the dummy gate structure 16 isdoped with positive-type ions. A channel region and the drain region 12are defined by a tetragon gate structure 24 surrounded by a sourceregion 20 of the NMOS cell. The formation of the NMOS cell is completedwith a guard ring 18 bordering the source region 20. A plurality of theNMOS cells may be coupled in parallel to create a larger channel widthand optimize driving ability and ESD robustness. Similarly, PMOS cellshaving dummy gate structures and used as an ESD protection component canbe fabricated by those skilled in the art without the addition offurther descriptions.

[0037] The tetragon NMOS or PMOS cells can be used at an input/output(I/O) pad of an ESD protection circuit or an ESD clamping circuitbetween power lines. An embodiment of the tetragon NMOS and PMOS cellsused at an I/O pad of an ESD protection circuit is shown in FIG. 8. SixNMOS cells are formed into a matrix between a pad 52 and a VSS powerline 54. Sources and drains of the NMOS cells are coupled in parallel.Gates of the NMOS cells may be coupled to a pre-driver (not shown) orthe VSS power line 54 in accordance with the required driving ability.Substrate triggering regions for generating triggering current of theNMOS cells are coupled to an ESD detection circuit 50 a through contactsor metal strips. When an ESD event is detected between the pad 52 andthe VSS power line 54, triggering current is provided to all the NMOScells by the ESD detection circuit 50 a and the parasitic BJTs under theNMOS cells are triggered on. The number of the NMOS cells is not limitedto six and can vary accordingly. During normal circuit operations, nocurrent is provided by the ESD detection circuit 50 a so that theparasitic BJTs are closed. Layout and operations of PMOS cells of thepresent invention coupled between the pad 52 and a VDD power line 56 aresimilar to those of the NMOS cells. Relevant descriptions can thus beomitted.

[0038] An embodiment of the tetragon PMOS or NMOS cells of the presentinvention used in an ESD clamping circuit between power lines isdescribed in FIG. 9. A plurality of the NMOS or PMOS cells of thepresent invention configured into a matrix are coupled between a VDDpower line 56 and a VSS power line 54. Substrate-triggering regions usedto provide triggering current are coupled to an ESD detection circuit 50c. When an ESD event is detected between the VDD power line 56 and theVSS power line 54 by the ESD detection circuit 50 c, triggering currentis provided by the ESD detection circuit 50 c to thesubstrate-triggering regions, and parasitic BJTs in the MOS cells areevenly triggered on. During normal circuit operations, on the otherhand, no current is provided by the ESD detection circuit 50 c.Therefore, no parasitic BJTs are triggered and the NMOS or PMOS cellsare closed.

[0039] ESD protection components implemented by the concept of thepresent invention can also be used in a stacked MOSFET. In contrast to asingle MOSFET having only one gate structure for controlling a circuit,a plurality of gate structures are formed in a stacked MOSFET with everytwo gate structures sharing a drain/source region. The stacked MOSFETsare formed by MOSFETs connected in series.

[0040]FIG. 10a is a cross section and a corresponding symbol of thestacked NMOS fabricated in accordance with the present invention. Acircuit implemented by the stacked NMOS in FIG. 10a is shown in FIG.10b. Gate structures 27 and 29 are formed between a N+ source region 20and a N+ drain region 12. A shared N+ doped region 37 is formed betweenthe two gate structures 27 and 29. A P+ doped region 10 used as asubstrate-triggering region to provide triggering current is formed inthe drain region 12. A dummy gate structure 16 is formed to isolate theP+ doped region 10 from the drain region 12. During a p+ ionimplantation, a region 16 a of the dummy gate 16 close to the P+ dopedregion 10 is doped with positive-type ions. During an N+ ionimplantation, a region 16 b of the dummy gate 16 close to the drainregion 12 is simultaneously doped with negative-type ions. The operationof the stacked NMOS in FIGS. 10a and 10 b is similar to the single NMOSillustrated in FIGS. 4a and 4 b during an ESD event and under normalcircuit operations and thus is not illustrated further more.

[0041]FIG. 11 shows the top view of a stacked NMOS fabricated inaccordance with the present invention. The stacked NMOS is surrounded bya guard ring 18 isolated from an active region 34 by a field oxide layer32. The stacked NMOS in FIG. 11 is a finger-type NMOS having a pluralityof parallel gate structures 27 and 29, with every two gate structures 27and 29 sharing a common (N+) source/drain region 37. Dummy gatestructures 16 are formed in drain regions 12. P+ doped regions 10 usedas substrate-triggering regions to provide triggering current aresurrounded by the dummy gate structures 16. Regions 16 a of the dummygate structures 16 are doped with positive-type ions and regions 16 b ofthe dummy gate structures 16 are doped with negative-type ions. Thedummy gate structures 16 are fabricated in accordance with the minimumrule for shortening the distances between the P+ doped regions 10 andthe bases of parasitic BJTs in the stacked NMOS and minimizing thelayout area of the components. Similarly, a stacked PMOS implemented bydummy gate structures can be fabricated in accordance with the proposedconfigurations.

[0042] Stacked MOSFETs corresponding to the single MOSFETs in FIGS. 7 to9 are shown in FIGS. 12 to 14. Operations of the embodiments in FIGS. 12to 14 are similar to those described. Relevant descriptions are thusomitted.

[0043] In conventional techniques, substrate-triggering regionsproviding triggering current are surrounded by field-oxide layers. Incomparison, the substrate-triggering regions in the ESD protectioncomponents fabricated in accordance with the present invention aresurrounded by dummy gate structures. Dummy gate structures are generallynarrower than field oxide layers. Therefore, substrate-triggeringregions used to provide triggering current in ESD protection componentsof the present invention are closer to the bases of parasitic BJTs ofthe ESD protection components. Triggering speed during an ESD event andESD robustness of the ESD protection components are thus enhanced.

[0044] While the invention has been described by way of example and interms of the preferred embodiments, it is to be understood that theinvention is not limited to the disclosed embodiments. To the contrary,it is intended to cover various modifications and similar arrangements(as would be apparent to those skilled in the art). Therefore, the scopeof the appended claims should be accorded the broadest interpretation soas to encompass all such modifications and similar arrangements.

What is claimed is:
 1. A substrate-triggered electrostatic discharge(ESD) protection component, suitable for application on a substrate,comprising: a first doped region of a first conductivity type and formedon the substrate; a bipolar junction transistor (BJT) comprising: anemitter and a collector respectively formed by a second doped region anda third doped region on the first doped region, both of a secondconductivity type; and a base, formed by part of the first doped regionbetween the second and the third doped regions; a substrate-triggeringregion, formed by a fourth doped region of the first conductivity typein the first doped region, to provide triggering current; and a dummygate structure having a poly-silicon gate, formed adjacent to thesubstrate-triggering region and the third doped region; wherein theemitter is coupled to a power line, the collector is coupled to a pad,and the substrate-triggering region is coupled to an ESD detectioncircuit; during normal circuit operations, the base couples with thepower line through the ESD detection circuit; and during an ESD event, atriggering current is provided to the substrate-triggering region by theESD detection circuit to trigger the BJT and release ESD current.
 2. Thesubstrate-triggered ESD protection component in claim 1, wherein thesubstrate is a semiconductor of the first conductivity type.
 3. Thesubstrate-triggered ESD protection component in claim 1, wherein thesubstrate is a semiconductor of the second conductivity type and thefirst doped region is a well on the substrate.
 4. Thesubstrate-triggered ESD protection component in claim 1, wherein thepoly-silicon gate comprises a first region of the first conductivitytype and adjacent to the substrate-triggering region, and a secondregion of the second conductivity type and adjacent to the third dopedregion.
 5. The substrate-triggered ESD protection component in claim 1,wherein the substrate-triggering region is surrounded by the dummy gatestructure.
 6. The substrate-triggered ESD protection component in claim1, wherein the ESD protection component further comprises a guard ringof the first conductivity type and formed on the first doped regionenclosing the BJT, the substrate-triggering region, and the dummy gatestructure.
 7. The substrate-triggered ESD protection component in claim1, wherein the collector and emitter are a drain region and a sourceregion of a metal oxide semiconductor (MOS).
 8. The substrate-triggeredESD protection component in claim 7, wherein the MOS has a gatestructure formed on the first doped region, to separate the drain regionfrom the source region and enclosing the dummy gate structure and thesubstrate-triggering region.
 9. The substrate-triggered ESD protectioncomponent in claim 1, wherein the ESD protection component furthercomprises a stacked metal-oxide-semiconductor (MOS) transistor,comprising: a plurality of gate structures formed on the first dopedregion; at least one shared drain/source region, formed on the firstdoped region between the gate structures; and two independentdrain/source regions formed on the first doped region and adjacent totwo control gates of the gate structures, to become the collector andthe emitter of the BJT.
 10. The substrate-triggered ESD protectioncomponent in claim 9, wherein the dummy gate structure and thesubstrate-triggering region are surrounded by the gate structures. 11.The substrate-triggered ESD protection component in claim 1, wherein awell region of the second conductivity type is formed under the seconddoped region to increase spread resistance between the base and thepower line.
 12. An ESD protection circuit, suitable for application ofan integrated circuit (IC), comprising: an ESD detection circuit, fordetecting an ESD event and providing triggering current; a bipolarjunction transistor (BJT), comprising: a base, formed by a first dopedregion of a first conductivity type, coupled to the ESD detectioncircuit through a substrate-triggering region; and a collector and anemitter, respectively formed by a second doped region and a third dopedregion, both of a second conductivity type and formed on the first dopedregion, the emitter coupled to a power line and the collector coupled toa pad; and a dummy gate structure, to separate the second doped regionis from the substrate-triggering region, and comprising a conductivegate, part of the conductive gate having dopant of the firstconductivity type and the other part of the conductivity gate havingdopant of the second conductivity type; wherein during normal circuitoperations, the base is coupled to the power line, and when an ESD eventoccurs at the pad, the BJT is triggered by the triggering current torelease ESD current.
 13. A structure of an ESD protection component,suitable for application on a substrate, comprising: a guard ring of afirst conductivity type, formed on a first doped region of the firstconductivity type on the substrate and coupled to a power line; and anactive region, formed on the surface of the first doped region andsurrounded by the guard ring, comprising: at least two gate structuresformed approximately in parallel across the active region; at least oneannular dummy gate structure, formed between the gate structures; atleast a substrate-triggering region of the first conductivity type toprovide triggering current, formed on the active region surrounded bythe annular dummy gate structure and coupled to an ESD detectioncircuit; at least one source region of the second conductivity type,defined by the gate structures on the active region and coupled to thepower line; and at least one drain region of the second conductivitytype, defined by the gate structures and the annular dummy gatestructure on the active region, and coupled to a pad; wherein duringnormal circuit operations, the first doped region is coupled to thepower line through the guard ring; and, during an ESD event, triggeringcurrent is provided by the ESD detection circuit to trigger at least twobipolar-junction-transistors (BJTs) parasitic under the gate structuresto release ESD stress.
 14. The structure of an ESD protection componentin claim 13, wherein the gate structures are used as a single gate of ametal-oxide-semiconductor field-effect-transistor (MOSFET).
 15. Thestructure of an ESD protection component in claim 13, wherein the gatestructures are a plurality of gates of a stacked MOSFET.
 16. A structureof an ESD protection component, suitable for application on a substrate,comprising; a plurality of metal-oxide-semiconductorfield-effect-transistor (MOSFET) cells arranged into a matrix, eachMOSFET cell comprising: an annular dummy gate structure, formed on afirst doped region of a first conductivity type on the substrate; asubstrate-triggering region of the first conductivity type to providetriggering current, formed on the first doped region surrounded by theannular dummy gate structure and coupled to an ESD detection circuit; adrain region of a second conductivity type, formed on the first dopedregion surrounding the annular dummy gate structure and coupled to apad; a gate structure, formed on the first doped region surrounding thedrain region; a source region of the second conductivity type, formed onthe first doped region surrounding the gate structure and coupled to apower line; and a guard ring of the first conductivity type, formed onthe first doped region and coupled to the power line; wherein duringnormal circuit operations, the first doped region is coupled to thepower line through the guard ring, and during an ESD event, triggeringcurrent is provided by the ESD detection circuit to triggerbipolar-junction-transistors (BJTs) parasitic under the gate structuresto release ESD stress.
 17. The structure of the ESD protection componentin claim 16, wherein the gate structures of the MOSFET cells are coupledin parallel to become the gate of a single MOSFET.
 18. The structure ofthe ESD protection component in claim 13, wherein each of the MOSFETcells has a plurality of gate structures coupled in series to become astacked MOSFET having a plurality of gates.